esd-protection diode in llp1006-2l VESD05A1B-HD1 vishay semiconductors document number: 81796 for technical questions, contact: esdprotection@vishay.com www.vishay.com rev. 1.4, 26-oct-10 1 marking (example only) bar = cathode marking x = date code y = type code (see table below) features ? ultra compact llp1006-2l package ? low package height < 0.4 mm ? 1-line esd-protection ? low leakage current < 0.1 a ? low load capacitance c d = 12 pf (v r = 2.5 v; f = 1 mhz) ? esd-protection acc. iec 61000-4-2 30 kv contact discharge 30 kv air discharge ? high surge current acc. iec61000-4-5 i pp > 3 a ? soldering can be checked by standard vision inspection. no x-ray necessary ? pin plating nipdau (e4) no whisker growth ? e4 - precious metal (e.g. ag, au, nipd, nipdau) (no sn) ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec 20 8 55 20 8 56 2 1 21121 xy ordering information device name ordering code taped units per reel (8 mm tape on 7" reel) minimum order quantity VESD05A1B-HD1 VESD05A1B-HD1-gs08 8000 8000 package data device name package name type code weight molding compound flammability rating moisture sensitivity level soldering conditions VESD05A1B-HD1 llp1006-2l d 0.72 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals absolute maximum ratings parameter test conditions symbol value unit peak pulse current acc. iec 61000-4-5; t p = 8/20 s; single shot i ppm 3a peak pulse power acc. iec 61000-4-5; t p = 8/20 s; single shot p pp 33 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 30 kv air discharge acc. iec 61000-4-2; 10 pulses v esd 30 kv operating temperature junction temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c ** please see document vishay material category policy: www.vishay.com/doc?99902
VESD05A1B-HD1 vishay semiconductors esd-protection diode in llp1006-2l www.vishay.com for technical questions, contact: esdprotection@vishay.com document number: 81796 2 rev. 1.4, 26-oct-10 note ? ratings at 25 c, ambient temperature unless otherwise specified bias-mode (bi directional as ymmetrical protection mode) with the VESD05A1B-HD1 one signal- or data-lines (l1) can be protected against voltage tr ansients. with pin 1 connected to ground and pin 2 connected to a signal- or data-line which has to be protected. as long as the voltage level on the data- or signal-line is between 0 v (gro und level) and the specified m aximum r everse w orking v oltage ( v rwm ) the protection diode between data line and ground offers a high isolation to the ground line. the protect ion device behaves li ke an open switch. as soon as any positive transient voltage signal exceeds the break through voltage level of th e protection diode, the diode becomes conductive and shorts the transien t current to ground. now the protection de vice behaves like a closed switch. the c lamping v oltage ( v c ) is defined by the br eakthrough v oltage ( v br ) level plus the voltage drop at the series impedance (resistance and inductance) of the protection device. any negative transient signal w ill be clamped accordingly. the negative transien t current is flowing in the forward direction o f the protection diode. the low f orward v oltage ( v f ) clamps the negative transient close to the ground level. due to the different clamping levels in forward and reve rse direction the VESD05A1B-HD1 clamping behaviour is bi directional and as ymmetrical ( bias ). electrical characteristics VESD05A1B-HD1 bias mode (between pin 1 and pin 2) parameter test conditions/re marks symbol min. typ. max. unit protection paths number of lin es which can be protected n lines --1lines reverse stand off voltage at i r = 0.1 a v rwm 5--v reverse current at v r = 5 v i r - 0.01 0.1 a reverse breakdown voltage at i r = 1 ma v br 66.87.5v reverse clamping voltage at i pp = 1 a v c -89.5v at i pp = i ppm = 3 a v c -8.911v forward clamping voltage at i pp = 0.2 a v f - 0.95 1.2 v at i pp = 1 a v f -1.3- v at i pp = i ppm = 3 a v f -1.9- v capacitance at v r = 0 v; f = 1 mhz c d -1923pf at v r = 2.5 v; f = 1 mhz c d -12-pf l1 20925 2 1 ground bias
VESD05A1B-HD1 esd-protection diode in llp1006-2l vishay semiconductors document number: 81796 for technical questions, contact: esdprotection@vishay.com www.vishay.com rev. 1.4, 26-oct-10 3 typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - esd discharge current wave form acc. iec 61000-4-2 (330 /150 pf) fig. 2 - 8/20 s peak pulse current wave form acc. iec 61000-4-5 fig. 3 - typical capacitance c d vs. reverse voltage v r fig. 4 - typical forward current i f vs. forward voltage v f fig. 5 - typical reverse voltage v r vs. reverse current i r fig. 6 - typical clamping voltage vs. peak pulse current i pp 0 % 20 % 40 % 60 % 8 0 % 100 % 120 % - 10 0 10 20 30 40 50 60 70 8 0 90 100 time (ns) discharge c u rrent i esd rise time = 0.7 ns to 1 ns 53 % 27 % 20557 0 % 20 % 40 % 60 % 8 0 % 100 % 010203040 time (s) i ppm 20 s to 50 % 8 s to 100 % 2054 8 21156 v r (v) 04 3 2 1 5 25 20 15 10 0 c d (pf) 5 f = 1 mhz 21157 v f (v) 0.5 1 0. 8 0.7 0.6 0.01 100 10 1 0.1 0.001 i f (ma) 0.9 2115 8 i r (a) 0.01 100 10 1 0.1 1 5 4 3 2 0 v r (v) 10 000 1000 7 6 8 21159 i pp (a) v f /v c (v) - 4 - 2 0 2 4 6 8 10 012345 re v erse for w ard meas u red acc. iec 61000-4-5 ( 8 /20 s - w a v e form)
VESD05A1B-HD1 vishay semiconductors esd-protection diode in llp1006-2l www.vishay.com for technical questions, contact: esdprotection@vishay.com document number: 81796 4 rev. 1.4, 26-oct-10 fig. 7 - typical clamping performance at + 8 kv contact discharge (acc. iec 61000-4-2) fig. 8 - typical clamping performance at - 8 kv contact discharge (acc. iec 61000-4-2) fig. 9 - typical clamping voltage at esd contact discharge (acc. iec 61000-4-2) 21160 t (ns) v c-esd (v) - 40 - 30 - 20 - 10 0 10 20 30 40 50 60 - 100 10203040506070 8 090 acc. iec 61000-4-2 + 8 kv contact discharge re v erse 21161 t (ns) v c-esd (v) - 60 - 50 - 40 - 30 - 20 - 10 0 10 20 30 40 50 - 10 0 10 20 30 40 50 60 70 8 090 acc. iec 61000-4-2 - 8 kv contact discharge for w ard - 150 - 100 - 50 0 50 100 150 0 5 10 15 20 21162 v c-esd (v) v esd (kv) acc. iec 61000-4-2 contact discharge re v erse for w ard
VESD05A1B-HD1 esd-protection diode in llp1006-2l vishay semiconductors document number: 81796 for technical questions, contact: esdprotection@vishay.com www.vishay.com rev. 1.4, 26-oct-10 5 package dimensions in millimeters (inches): llp1006-2l 20 8 12 doc u ment no.:s 8 -v-3906.04-005 (4) 0.55 (0.022) 0.45 (0.01 8 ) 0.25 (0.010) 0.15 (0.006) 0.45 (0.01 8 ) 0.35 (0.014) 0.3 (0.012) 0.2 (0.00 8 ) 0.4 (0.016) 0.33 (0.013) 1.05 (0.041) 0.95 (0.037) 0.05 (0.002) 0 (0.000) 0.125 (0.005) ref. 0.65 (0.026) 0.55 (0.022) 0.05 (0.002) 0.25 (0.010) 0.5 (0.020) 1 (0.039) 0.5 [0.020] 0.6 (0.024) 0.2 (0.00 8 ) re v . 4 - date: 12. sept. 200 8 created - date: 13. j u ly. 2007 orientation identification foot print recommendation: solder resist mask solder pad soldermask opening 0.03 meas u red middle of the package
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